Composition at the CuInSe2 – ZnO interface: copper-depletion induced by diethyl-zinc
نویسندگان
چکیده
The interface formation between epitaxial CuInSe2(112) films and ZnO deposited by metal-organic MBE is investigated by photoelectron spectroscopy. Reaction of diethyl-zinc with CuInSe2 leads to the formation of an intrinsic ZnSe layer and copper-depletion of the interface. This is associated with Zn doping of the chalcopyrite surface and a Fermi level shift towards the conduction band. The implications on the band alignment are discussed.
منابع مشابه
Cd doping at the CuInSe2 ÕCdS heterojunction
The chemical composition of the CuInSe2 /CdS heterojunction interface is investigated by angle resolved x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy in combination with selective etching of CdS. We demonstrate that ;0.8 monolayer of Cd is incorporated into the first 1–3 atomic layers of the CuInSe2 . This is accompanied by significant Cu dep...
متن کاملPreparation and Characterization of the Composites Based on the Zinc Oxide Captured on the Surface of Kaolinite
Nanostructured zinc oxide is intensively studied semiconductor showing photocatalytical activity. There are several precursors which can be used for the preparation of nanostructured zinc oxide like zinc acetate, zinc sulphate and many others. Zinc chloride is another compound which can serve as a zinc source for zinc oxide preparation. Nowadays the environmental aspects connected to applicatio...
متن کاملElectrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications
Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films by Kelvin probe force microscopy. It is found that the Fermi Level of the 8 at.% Cu-doped ZnO films shifted by 0.53 eV comparing to undoped Zn...
متن کاملStudies on ZnO/Si Heterojunction Diode Grown by Atomic Layer Deposition Technique
In this paper studies on Si/ZnO heterojunction diode is presented. In this work Zinc oxide (ZnO) was conformally deposited on Silicon (Si) Wafer by atomic layer deposition (ALD) technique without using a buffer layer. For low-temperature ALD deposition, diethyl zinc (DEZn) and deionized (DI) water were used as the sources for zinc and oxygen respectively. Surface characterization and optical ch...
متن کاملComment on "Active sites for CO2 hydrogenation to methanol on Cu/ZnO catalysts".
Kattel et al (Reports, 24 March 2017, p. 1296) report that a zinc on copper (Zn/Cu) surface undergoes oxidation to zinc oxide/copper (ZnO/Cu) during carbon dioxide (CO2) hydrogenation to methanol and conclude that the Cu-ZnO interface is the active site for methanol synthesis. Similar experiments conducted two decades ago by Fujitani and Nakamura et al demonstrated that Zn is attached to format...
متن کامل